NE5209 Datasheet | Philips Semiconductors

INTEGRATED CIRCUITS NE/SA5209 Wideband variable gain amplifier Product specification RF munications Handbook 1990 Aug 20 Philips Semiconductors Philips Semiconductors Product specification Wideband variable gain amplifier NE/SA5209 DESCRIPTION The NE5209 represents a breakthrough in monolithic amplifier design featuring several innovations. This unique design has bined the advantages of a high speed bipolar process with the proven Gilbert architecture. The NE5209 is a linear broadband RF amplifier whose gain is controlled by a single DC voltage. The amplifier runs off a single 5 volt supply and consumes only 40m A. The amplifier has high impedance (1kΩ) differential inputs. The output is 50Ω differential. Therefore, the 5209 can simultaneously perform AGC, impedance transformation, and the balun functions. The dynamic range is excellent over a wide range of gain setting. Furthermore, the noise performance degrades at a paratively slow rate as the gain is reduced. This is an important feature when building linear AGC systems. PIN CONFIGURATION N, D PACKAGES VCC1 GND1 INA GND1 INB GND1 VBG VAGC 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 VCC2 GND2 OUTA GND2 OUTB GND2 GND2 GND2 SR00237 Figure 1. Pin Configuration Features - Gain to 1.5GHz - 850MHz bandwidth - High impedance differential input - 50Ω differential output - Single 5V power supply - 0 - 1V gain control pin - >60d B gain control range at 200MHz - 26d B maximum gain differential - Exceptional VCONTROL / VGAIN linearity - 7d B noise figure minimum - Full ESD protection - Easily cascadable ORDERING...