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PHP12N50E Datasheet PDF

Philips PHP12N50E

The PHW11N50E is supplied in the SOT429 (TO247) conventional leaded package. The PHB11N50E is supplied in the SOT404 surface mounting package.
Part No. PHP12N50E
Datasheet PHP12N50E Download
Manufacturer
Philips
Description PowerMOS transistors
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PHP12N50E datasheet page 1 preview

FEATURES

● Repetitive Avalanche Rated
● Fast switching
● Stable off-state characteristics
● High thermal cycling performance
● Low thermal resistance PHB11N50E, PHW11N50E SYMBOL d QUICK REFERENCE DATA VDSS = 500 V g ID = 10.9 A RDS(ON) ≤ 0.55 Ω s

GENERAL DESCRIPTION

N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. PINNING PIN 1 2 3 tab

DESCRIPTION

gate drain1 source SOT404 tab SOT429 (TO247) 2 drain 1 3 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDSS VDGR VGS ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total dissipation Operating junction and storage temperature range CONDITIONS Tj = 25 ˚C to 150˚C Tj = 25 ˚C to 150˚C; RGS = 20 kΩ Tmb = 25 ˚C; VGS = 10 V Tmb = 100 ˚C; VGS = 10 V Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 MAX.
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