Datasheet4U Logo Datasheet4U.com

PHP12N50E - PowerMOS transistors

General Description

N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V.

and computer monitor power supplies, d.c.

to d.c.

Key Features

  • Repetitive Avalanche Rated.
  • Fast switching.
  • Stable off-state characteristics.
  • High thermal cycling performance.
  • Low thermal resistance PHB11N50E, PHW11N50E SYMBOL d QUICK.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PHP12N10E PowerMOS transistor NXP
PHP12NQ15T N-channel TrenchMOS transistor NXP
PHP120 7/500 & 15/000 Watt TVS Module Semtech Corporation
PHP125 P-channel enhancement mode MOS transistor NXP
PHP125N06LT TrenchMOS transistor Logic level FET NXP

Other Datasheets by Philips Semiconductors (now NXP Semiconductors)

Part Number Description
PHP55N03LTA Logic Level FET
PHP7NQ60E N-Channel MOSFET
PHP8N50 PowerMOS transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance PHB11N50E, PHW11N50E SYMBOL d QUICK REFERENCE DATA VDSS = 500 V g ID = 10.9 A RDS(ON) ≤ 0.55 Ω s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHW11N50E is supplied in the SOT429 (TO247) conventional leaded package. The PHB11N50E is supplied in the SOT404 surface mounting package.