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PHX7NQ60E - N-Channel MOSFET

General Description

N-channel, enhancement mode field-effect power transistor.

PHP7NQ60E in TO-220AB (SOT78) PHX7NQ60E in isolated TO-220AB.

3.

Key Features

  • ria l Product availability: Philips Semiconductors PHP7NQ60E; PHX7NQ60E N-channel enhancement mode field-effect transistor 5. Quick reference data Table 2: Symbol VDS ID Tj RDSon Quick reference data Parameter drain-source voltage (DC) drain current (DC) junction temperature drain-source on-state resistance VGS =1 0V ; ID = 3.5 A Tj =2 5 °C Tj = 150 °C Conditions 25 °C ≤ Tj ≤ 150 °C Tc =2 5 °C; VGS =1 0V [1] Typ -7 0.94 Max 600 150 1.2 Unit V A °C Ω Ω 6. Limiting values Table 3: Symbol.

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PHP7NQ60E; PHX7NQ60E N-channel enhancement mode field-effect transistor Rev. 01 — 20 August 2002 Product data 1. Description N-channel, enhancement mode field-effect power transistor. PHP7NQ60E in TO-220AB (SOT78) PHX7NQ60E in isolated TO-220AB. 3. Applications s s s s 4. Pinning information Table 1: Pin 1 Description gate (g) Simplified outline mb ww Pinning - TO-220AB and isolated TO-220AB, simplified outline and symbol Symbol mb PD 2 3 F w C drain (d) source (s) r e .n a MBK106 ua DC to DC converters Switched mode power supplies Electronic lighting ballasts T.V. and computer monitor power supplies. t e n 1 2 3 ce. d g s MBK110 mb (TO-220AB only) mounting base, connected to drain (d) 1 2 3 TO-220AB (SOT78) isolated TO-220AB om MBB076 http://www.Datasheet4U.