PMBD7000 Datasheet | Philips Semiconductors

FEATURES - Small plastic SMD package - High switching speed: max. 4 ns - Continuous reverse voltage: max. 100 V - Repetitive peak reverse voltage: max. 100 V - Repetitive peak forward current: max. 450 m A. APPLICATIONS - High-speed switching in e.g. surface mounted circuits. handbook, halfpage 2 PINNING PIN 1 2 3 DESCRIPTION anode cathode mon connection DESCRIPTION The PMBD7000 consists of two high-speed switching diodes connected in series, fabricated in planar technology, and encapsulated in the small SOT23 plastic SMD package. 2 3 3 MAM232 Marking code: p5C = made in Hong Kong; t5C = made in Malaysia. Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Per diode VRRM VR IF repetitive peak reverse voltage continuous reverse voltage continuous forward current single diode loaded; see Fig.2; note 1 double diode loaded; see Fig.2; note 1 IFRM IFSM repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 µs t = 1 ms t=1s Ptot Tstg Tj Note 1. Device mounted on an FR4 printed-circuit board. total power dissipation storage temperature junction temperature Tamb = 25 °C; note 1 - - - - - 65 - 4 1 0.5 250 +150 150 A A A m W °C °C - - - - - 100 100 215 125 450 V V m A m A m A PARAMETER CONDITIONS MIN. MAX. UNIT 1999 May 11 Philips Semiconductors Product specification High-speed double diode ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL Per diode VF forward voltage see Fig.3 IF = 1 m A IF = 10 m A IF = 50 m A IF = 100 m A IF = 150 m A IR reverse current see Fig.5 VR = 50 V VR = 100 V VR = 50 V; Tj = 150 °C Cd trr diode capacitance reverse recovery time f = 1 MHz; VR = 0; see Fig.6 when switched from IF = 10 m A to IR = 10 m A; RL = 100 Ω; measured at IR = 1 m A; see Fig.7 when switched from IF = 10 m A; tr = 20 ns; see Fig.8 - - - - - 550 670 - 0.75 - PARAMETER CONDITIONS...