Datasheet4U Logo Datasheet4U.com

PMBF170 - N-channel enhancement mode vertical D-MOS transistor

General Description

N-channel enhancement mode vertical D-MOS transistor in a SOT23 envelope.

Designed for use as a Surface Mounted Device (SMD) in thin and thick-film circuits with applications in relay, high-speed and line transformer drivers.

Key Features

  • Direct interface to C-MOS, TTL, etc.
  • High-speed switching.
  • No secondary breakdown QUICK.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PMBFJ108 N-channel FET NXP
PMBFJ109 N-channel FET NXP
PMBFJ110 N-channel FET NXP
PMBFJ111 N-channel FET NXP
PMBFJ112 N-channel FET NXP

Other Datasheets by Philips Semiconductors (now NXP Semiconductors)

Part Number Description
PMBF107 N-channel enhancement mode vertical D-MOS transistor
PMBF4391 N-channel FETs
PMBF4392 N-channel FETs
PMBF4393 N-channel FETs
PMBF4416 N-channel field-effect transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DISCRETE SEMICONDUCTORS DATA SHEET PMBF170 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT23 envelope. Designed for use as a Surface Mounted Device (SMD) in thin and thick-film circuits with applications in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc.