PMBF4416 Datasheet | Philips Semiconductors

FEATURES - Low noise - Interchangeability of drain and source connections - High gain. handbook, halfpage PMBF4416; PMBF4416A 3 d s DESCRIPTION N-channel symmetrical silicon junction FETs in a surface-mountable SOT23 envelope. These devices are intended for use in VHF/UHF amplifiers, oscillators and mixers. PINNING - SOT23 PIN 1 2 3 drain gate QUICK REFERENCE DATA SYMBOL VDS PARAMETER drain-source voltage PMBF4416 PMBF4416A IDSS Ptot VGS(off) drain-source current total power dissipation gate-source cut-off voltage PMBF4416 PMBF4416A  Yfs  mon-source transfer admittance VDS = 15 V; VGS = 0; f = 1 k Hz VDS = 15 V; VGS = 0 - - 5 30 35 15 250 V V m A m W CONDITIONS MIN. MAX. UNIT DESCRIPTION source Fig.1 Simplified outline and symbol. g 1 Top view MAM385 Marking codes: PMBF4416: P6A. PMBF4416A: M16. up to Tamb = 25 °C - VDS = 15 V; ID = 1 n A - - 2.5 4.5 - 6 - 6 7.5 V V m S April 1995 Philips Semiconductors Product specification N-channel field-effect transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS PARAMETER drain-source voltage PMBF4416 PMBF4416A VGSO gate-source voltage PMBF4416 PMBF4416A VGDO gate-drain voltage PMBF4416 PMBF4416A IG Ptot Tstg Tj DC forward gate current total power dissipation storage temperature junction temperature CONDITIONS PMBF4416; PMBF4416A MIN. - - - - - - - MAX. 30 35 - 30 - 35 - 30 - 35 10 250 +150 150 V V V V V V UNIT m A m W °C °C up to Tamb = 25 °C (note 1) - - 65 - THERMAL RESISTANCE SYMBOL Rth j-a Note 1. Mounted on an FR4 printed-circuit board. STATIC CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL V(BR)GSS PMBF4416 PMBF4416A IGSS IDSS VGSS VGS(off) reverse gate leakage current drain current gate-source forward voltage gate-source cut-off voltage PMBF4416 PMBF4416A  Yfs   Yos  mon source transfer admittance mon source output admittance PMBF4416 PMBF4416A VDS = 15 V; VGS = 0 VDS = 15 V; VGS = 0 - - 50 50 µS µS VDS = 0; VGS = - 15 V VDS = 15 V; VGS = 0 VDS...