Datasheet4U Logo Datasheet4U.com

PMBF4416 - N-channel field-effect transistor

General Description

N-channel symmetrical silicon junction FETs in a surface-mountable SOT23 envelope.

These devices are intended for use in VHF/UHF amplifiers, oscillators and mixers.

Key Features

  • Low noise.
  • Interchangeability of drain and source connections.
  • High gain. handbook, halfpage PMBF4416; PMBF4416A 3 d s.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PMBFJ108 N-channel FET NXP
PMBFJ109 N-channel FET NXP
PMBFJ110 N-channel FET NXP
PMBFJ111 N-channel FET NXP
PMBFJ112 N-channel FET NXP

Other Datasheets by Philips Semiconductors (now NXP Semiconductors)

Part Number Description
PMBF4416A N-channel field-effect transistor
PMBF4391 N-channel FETs
PMBF4392 N-channel FETs
PMBF4393 N-channel FETs
PMBF107 N-channel enhancement mode vertical D-MOS transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DISCRETE SEMICONDUCTORS DATA SHEET PMBF4416; PMBF4416A N-channel field-effect transistor Product specification File under Discrete Semiconductors, SC07 April 1995 Philips Semiconductors Product specification N-channel field-effect transistor FEATURES • Low noise • Interchangeability of drain and source connections • High gain. handbook, halfpage PMBF4416; PMBF4416A 3 d s DESCRIPTION N-channel symmetrical silicon junction FETs in a surface-mountable SOT23 envelope. These devices are intended for use in VHF/UHF amplifiers, oscillators and mixers.