PMBF4416 Description
N-channel symmetrical silicon junction FETs in a surface-mountable SOT23 envelope. These devices are intended for use in VHF/UHF amplifiers, oscillators and mixers. PINNING - SOT23 PIN 1 2 3 drain gate QUICK REFERENCE DATA SYMBOL VDS PARAMETER drain-source voltage PMBF4416 PMBF4416A IDSS Ptot VGS(off) drain-source current total power dissipation gate-source cut-off voltage PMBF4416 PMBF4416A Yfs mon-source...
PMBF4416 Key Features
- Low noise
- Interchangeability of drain and source connections
- High gain
- 5 30 35 15 250 V V mA mW CONDITIONS MIN. MAX. UNIT DESCRIPTION source Fig.1 Simplified outline and symbol
- VDS = 15 V; ID = 1 nA
- 2.5 4.5
- 6 -6 7.5