PMBF5485 Datasheet | Philips Semiconductors

FEATURES - Low noise - Interchangeability of drain and source connections - High gain. handbook, halfpage PMBF5484; PMBF5485; PMBF5486 3 d s DESCRIPTION N-channel, symmetrical, silicon junction FETs in a surface-mountable SOT23 envelope. Intended for use in VHF/UHF amplifiers, oscillators and mixers. PINNING - SOT23 PIN 1 2 3 drain gate QUICK REFERENCE DATA SYMBOL VDS IDSS PARAMETER drain-source voltage drain current PMBF5484 PMBF5485 PMBF5486 Ptot VGS(off) total power dissipation gate-source cut-off voltage PMBF5484 PMBF5485 PMBF5486  Yfs  mon source transfer admittance PMBF5484 PMBF5485 PMBF5486 VDS = 15 V; VGS = 0; f = 1 k Hz 3 3.5 4 6 7 8 m S m S m S up to Tamb = 25 °C VDS = 15 V; ID = 1 n A - 0.3 - 0.5 - 2 - 3 - 4 - 6 V V V VDS = 15 V; VGS = 0 1 4 8 - 5 10 20 250 m A m A m A m W CONDITIONS MIN. - MAX. UNIT 25 V DESCRIPTION source Fig.1 Simplified outline and symbol. g 1 Top view MAM385 MARKING CODES: PMBF5484: p6B PMBF5485: p6M PMBF5486: p6H April 1995 Philips Semiconductors Product specification N-channel field-effect transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS VGSO VGDO IG Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage gate-drain voltage DC forward gate current total power dissipation storage temperature junction temperature up to Tamb = 25 °C (note 1) CONDITIONS PMBF5484; PMBF5485; PMBF5486 MIN. - - - - - - 65 - MAX. 25 - 25 - 25 10 250 +150 150 V V V UNIT m A m W °C °C THERMAL RESISTANCE SYMBOL Rth j-a Note 1. Device mounted on an FR4 printed-circuit board. STATIC CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL V(BR)GSS IDSS PARAMETER gate-source breakdown voltage drain current PMBF5484 PMBF5485 PMBF5486 IGSS VGSS VGS(off) reverse gate leakage current gate-source forward voltage gate-source cut-off voltage PMBF5484 PMBF5485 PMBF5486  Yfs  mon source transfer admittance PMBF5484 PMBF5485 PMBF5486  Yos  mon source output admittance PMBF5484 PMBF5485 PMBF5486 VDS =...