PMBT2369 Datasheet | Philips Semiconductors

FEATURES - Low current (max. 200 m A) - Low voltage (max. 15 V). APPLICATIONS - High-speed switching, especially in portable equipment. DESCRIPTION NPN switching transistor in a SOT23 plastic package. MARKING TYPE NUMBER PMBT2369 Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) ∗1J Top view PINNING PIN 1 2 3 base emitter collector DESCRIPTION handbook, halfpage 3 3 1 2 MAM255 Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open base open collector CONDITIONS open emitter - - - - - - - - 65 - - 65 MIN. MAX. 40 15 5 200 300 100 250 +150 150 +150 UNIT V V V m A m A m A m W °C °C °C 1999 Apr 27 Philips Semiconductors Product specification NPN switching transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEBO h FE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = 20 V IE = 0; VCB = 20 V; Tj = 125 °C IC = 0; VEB = 4 V IC = 10 m A; VCE = 1 V IC = 10 m A; VCE = 1 V; Tamb = - 55 °C IC = 100 m A; VCE = 2 V VCEsat VBEsat Cc f T ton td tr toff ts tf collector-emitter saturation voltage base-emitter saturation voltage collector capacitance transition frequency IC = 10 m A; IB = 1 m A IC = 10 m A; IB = 1 m A IE = ie = 0; VCB = 5 V; f = 1 MHz IC = 10 m A; VCE = 10 V; f = 100 MHz ICon = 10 m A; IBon = 3 m A; IBoff = - 1.5 m A - - - 40 20 20 - 700 - 500 - - - - - - MIN. PARAMETER thermal resistance from junction to ambient CONDITIONS note...