PMBT3640 Datasheet | Philips Semiconductors

DESCRIPTION PNP general purpose switching transistor in a SOT23 package. PINNING PIN 1 2 3 base emitter collector 1 Top view DESCRIPTION Code: V25 fpage MSB003 Fig.1 SOT23. LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL - VCBO - VCEO - VEBO - IC Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage DC collector current total power dissipation storage temperature junction temperature up to Ts = 85 °C (note 1) open base open collector CONDITIONS open emitter - - - - - - 55 - MIN. MAX. 12 12 4 80 350 150 175 UNIT V V V m A m W °C °C THERMAL RESISTANCE SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector tab. PARAMETER from junction to soldering point (note 1) THERMAL RESISTANCE 260 K/W September 1995 Philips Semiconductors Product specification PNP 1 GHz switching transistor CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL Off characteristics - V(BR)CBO - V(BR)CES - V(BR)EBO - ICES - IB h FE - VCEsat collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cut-off current base current - IC = 100 µA; IE = 0 - IC = 100 µA; VBE = 0 - IE = 100 µA; IC = 0 - VCE = 6 V; VBE = 0 - VCE = 6 V; VBE = 0; Tamb = 65 °C - VCE = 6 V; VBE = 0 - IC = 10 m A; - VCE = 0.3 V - IC = 50 m...