PMBTA14 Datasheet | Philips Semiconductors

FEATURES - High current (max. 500 m A) - Low voltage (max. 30 V) - High DC current gain (min. 10000). APPLICATIONS - High input impedance preamplifiers. DESCRIPTION NPN Darlington transistor in a SOT23 plastic package. PNP plement: PMBTA64. MARKING PMBTA13; PMBTA14 PINNING PIN 1 2 3 base emitter collector DESCRIPTION handbook, halfpage TR1 TR2 2 2 MAM298 TYPE NUMBER PMBTA13 PMBTA14 Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) ∗1M ∗1N Top view Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCES VEBO IC ICM IB Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current base current (DC) total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 VBE = 0 open collector CONDITIONS open emitter - - - - - - - - 65 - - 65 MIN. MAX. 30 30 10 500 800 200 250 +150 150 +150 V V V m A m A m A m W °C °C °C UNIT 1999 Apr 29 Philips Semiconductors Product specification NPN Darlington transistors THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEBO h FE PARAMETER collector cut-off current emitter cut-off current DC current gain PMBTA13 PMBTA14 DC current gain PMBTA13 PMBTA14 VCEsat VBEon f T collector-emitter saturation voltage IC = 100 m A; IB = 0.1 m A base-emitter on-state voltage transition frequency IC = 100 m A; VCE = 5 V CONDITIONS IE = 0; VCB = 30 V IC = 0; VEB = 10 V PARAMETER thermal resistance from junction to ambient note 1 CONDITIONS PMBTA13; PMBTA14 VALUE 500 UNIT K/W MIN. - - 5000 10000 MAX. 100 100 - - - - 1.5 1.4 - UNIT n A n A IC = 10 m A; VCE = 5 V; (see...