PMBTA56 Datasheet | Philips Semiconductors

FEATURES - High current (max. 500 m A) - Low voltage (max. 80 V). APPLICATIONS - General purpose switching and amplification, e.g. telephony and professional munication equipment. DESCRIPTION handbook, halfpage PINNING PIN 1 2 3 base emitter collector DESCRIPTION PNP transistor in a SOT23 plastic package. NPN plement: PMBTA06. MARKING TYPE NUMBER PMBTA56 Note 1. - = p : Made in Hong Kong. - = t : Made in Malaysia. - = W : Made in China. ORDERING INFORMATION TYPE NUMBER PMBTA56 PACKAGE NAME - DESCRIPTION plastic surface mounted package; 3 leads MARKING CODE(1) - 2G Top view 3 3 1 2 1 2 MAM256 Fig.1 Simplified outline (SOT23) and symbol. VERSION SOT23 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector MIN. - - - - - - - - 65 - - 65 MAX. - 80 - 80 - 5 - 500 - 1 - 200 250 +150 150 +150 UNIT V V V m A A m A m W °C °C °C 2004 Jan 09 Philips Semiconductors Product specification PNP general purpose transistor THERMAL CHARACTERISTICS SYMBOL Rth(j-a) Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO h FE VCEsat VBE f T PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = - 80 V IC = 0; VEB = - 5 V IC = - 10 m A; VCE = - 1 V IC = - 100 m A; VCE = - 1 V collector-emitter saturation voltage IC...