PMBTA64 Datasheet | Philips Semiconductors

FEATURES - High current (max. 500 m A) - Low voltage (max. 30 V) - High DC current gain (min. 10000). APPLICATIONS - High input impedance preamplifiers. DESCRIPTION PNP Darlington transistor in a SOT23 plastic package. NPN plement: PMBTA14. MARKING TYPE NUMBER PMBTA64 Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) ∗2V PINNING PIN 1 2 3 base emitter collector DESCRIPTION handbook, halfpage TR1 TR2 1 Top view 2 2 MAM299 Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCES VEBO IC ICM IB Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current base current (DC) total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 VBE = 0 open collector CONDITIONS open emitter - - - - - - - - 65 - - 65 MIN. MAX. - 30 - 30 - 10 - 500 - 800 - 200 250 +150 150 +150 V V V m A m A m A m W °C °C °C UNIT 1999 Apr 13 Philips Semiconductors Product specification PNP Darlington transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEBO h FE VCEsat VBEon f T PARAMETER collector cut-off current emitter cut-off current DC current gain collector-emitter saturation voltage base-emitter on-state voltage transition frequency CONDITIONS IE = 0; VCB = - 30 V IC = 0; VEB = - 10 V; IC = - 10 m A; VCE = - 5 V; (see Fig.2) IC = - 100 m A; IB = - 0.1 m A IC = - 100 m A; VCE = - 5 V IC = - 10 m A; VCE...