PMBTA92 Datasheet | Philips Semiconductors

FEATURES - Low current (max. 100 m A) - High voltage (max. 300 V). APPLICATIONS - Telephony - Professional munication equipment. DESCRIPTION PNP high-voltage transistor in a SOT23 plastic package. NPN plement: PMBTA42. handbook, halfpage PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 3 1 MARKING TYPE NUMBER PMBTA92 Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) Top view 2 1 2 MAM256 ∗2D Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector - - - - - - - - 65 - - 65 MIN. MAX. - 300 - 300 - 5 - 100 - 200 - 100 250 +150 150 +150 V V V m A m A m A m W °C °C °C UNIT 1999 Apr 13 Philips Semiconductors Product specification PNP high-voltage transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 500 UNIT K/W CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO h FE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = - 200 V IC = 0; VEB = - 3 V VCE = - 10 V; note 1 IC = - 1 m A; IC = - 10 m A IC = - 30 m A VCEsat VBEsat Cc f T Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. collector-emitter saturation voltage base-emitter saturation voltage collector capacitance transition frequency IC...