PMBTH10 Datasheet | Philips Semiconductors

FEATURES - Low cost - High power gain. 1 DESCRIPTION The PMBTH10 is a general purpose silicon npn transistor, encapsulated in a SOT23 plastic envelope. Its pnp plement is the PMBTH81. 2 3 PINNING PIN base emitter collector 1 Top view DESCRIPTION Code: V30 fpage MSB003 Fig.1 SOT23. QUICK REFERENCE DATA SYMBOL VCBO VCEO VEBO Ptot h FE Cre Crb f T rb Cc PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage total power dissipation DC current gain collector-emitter feedback capacitance collector-base feedback capacitance transition frequency collector-base time constant open base open collector Ts = 45 °C (note 1) VCE = 10 V; IC = 4 m A VCB = 10 V; IE = 0; f = 1 MHz VCB = 10 V; IE = 0; f = 1 MHz VCE = 10 V; IC = 4 m A; f = 100 MHz; Tamb = 25 °C VCE = 10 V; IC = 4 m A; f = 100 MHz; Tamb = 25 °C CONDITIONS open emitter MIN. - - - - 60 - 0.35 650 - MAX. 30 25 3 400 - 0.7 0.65 - 9 p F p F MHz ps V V V m W UNIT LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector tab. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage DC collector current total power dissipation storage temperature junction temperature Ts = 45 °C (note 1) open base open collector CONDITIONS open emitter - - - - - - 65 - MIN. MAX. 30 25 3 40 400 150 150 UNIT V V V m A m W °C °C September 1995 Philips Semiconductors Product specification NPN 1 GHz general purpose switching transistor THERMAL RESISTANCE SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector tab. CHARACTERISTICS Tj = 25 °C. SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VCE sat VBE on ICBO IEBO h FE Cre Crb f T rb Cc PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector-emitter saturation voltage base-emitter ON voltage collector-base cut-off current emitter-base cut-off...