PMBTH10 Overview
Key Specifications
Max Operating Temp: 150 °C
Description
Code: V30 fpage 3 2 MSB003 Fig.1 SOT23. QUICK REFERENCE DATA SYMBOL VCBO VCEO VEBO Ptot hFE Cre Crb fT rbCc PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage total power dissipation DC current gain collector-emitter feedback capacitance collector-base feedback capacitance transition frequency collector-base time constant open base open collector Ts = 45 °C (note 1) VCE = 10 V; IC = 4 mA VCB = 10 V; IE = 0; f = 1 MHz VCB = 10 V; IE = 0; f = 1 MHz VCE = 10 V; IC = 4 mA; f = 100 MHz; Tamb = 25 °C VCE = 10 V; IC = 4 mA; f = 100 MHz; Tamb = 25 °C CONDITIONS open emitter MIN.
Key Features
- Low cost - High power gain
- 1 DESCRIPTION The PMBTH10 is a general purpose silicon npn transistor, encapsulated in a SOT23 plastic envelope
- Its pnp complement is the PMBTH81
- 2 3 PINNING PIN base emitter collector 1 Top view PMBTH10
