PMBTH81 Datasheet | Philips Semiconductors

FEATURES - Low cost - High transition frequency. 1 DESCRIPTION The PMBTH81 is a general purpose silicon pnp transistor, encapsulated in a SOT23 plastic envelope. Its plement is the PMBTH10. 2 3 PINNING PIN base emitter collector 1 Top view DESCRIPTION Code: V31 fpage MSB003 Fig.1 SOT23. QUICK REFERENCE DATA SYMBOL VCBO VCEO Ptot Cce Ccb f T Note 1. Ts is the temperature at the soldering point of the collector tab. PARAMETER collector-base voltage collector-emitter voltage total power dissipation collector-emitter capacitance collector-base capacitance transition frequency open base Ts = 45 °C (note 1) VCB = 10 V; IB = 0; f = 1 MHz VCB = 10 V; IE = 0; f = 1 MHz VCE = 10 V; IC = 5 m A; f = 100 MHz; Tamb = 25 °C CONDITIONS open emitter - - - - - 600 MIN. MAX. 20 20 400 0.65 0.85 - V V m W p F p F MHz UNIT September 1995 Philips Semiconductors Product specification PNP 1 GHz switching transistor LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current total power dissipation storage temperature junction temperature Ts = 45 °C (note 1) open emitter open base open collector CONDITIONS MIN. - - - - - - 65 - MAX. 20 20 3 40 400 150 150 UNIT V V V m A m W °C °C THERMAL RESISTANCE SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector tab. CHARACTERISTICS Tj = 25 °C SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VCE sat VBE on ICBO IEBO h FE Cce Ccb f T PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector-emitter saturation voltage base-emitter ON voltage collector-base cut-off current emitter-base cut-off current DC current gain collector-emitter capacitance collector-base capacitance transition frequency CONDITIONS open emitter; IC = 10 µA; IE = 0 open base; IC = 1 m A; IB = 0 open collector; IE = 10 µA; IC = 0 IC...