PMK27XP Datasheet | Philips Semiconductors

Description Extremely low level P-channel enhancement mode field-effect transistor in a plastic package using Trench DMOS technology. 1.2 Features s Low threshold s Low on-state resistance. 1.3 Applications s Load switching s Laptop puters s Battery packs s Battery powered portable equipment. 1.4 Quick reference data s VDS ≤ - 20 V s Ptot ≤ 2.5 W s ID ≤ - 6.5 A s RDSon = 27 mΩ (typ). 2. Pinning information Table 1: Pin 1,2,3 4 5,6,7,8 Pinning - SOT96-1 (SO-8), simplified outline and symbol Description source (s) gate (g) drain (d) g 1 Top view 4 MBK187 Simplified outline 8 5 Symbol d s MBB075 SOT 96-1 (SO-8) 3. Ordering information Table 2: Ordering information Package Name PMK27XP S08 Description Plastic surface mounted package; 8 leads Version SOT96-1 Type number Philips Semiconductors P-channel extremely low level FET 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS ID drain-source voltage (DC) drain current Conditions Tamb = 25 °C VGS = - 4.5 V; tp < 10s Tamb = 25 °C; Figure 2 Tamb = 70 °C; Figure 2 VGS = - 4.5 V; tp > 10s Tamb = 25 °C; Figure 2 Tamb = 70 °C; Figure 2 VGS IDM Ptot Ptot Tstg Tj IS gate-source voltage (DC) peak drain current total power dissipation total power dissipation storage temperature junction temperature source (diode forward) current (DC) Tamb = 25 °C Tamb = 25 °C; pulsed; tp ≤ 300 µs; Figure 3 Tamb = 25 °C; tp < 10s; Figure 1 Tamb = 25 °C; tp > 10s; Figure 1 - 55 - 55 - 4.6 - 3.7 - 12 - 32 2.5 1.25 +150 +150 - 1.7 A A V A W W °C °C A - 6.5 - 5.2 A A Min Max - 20 Unit V Source-drain diode 9397 750 11549 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data Rev....