PMMT591 Datasheet | Philips Semiconductors

FEATURES - High current (max. 1 A) - Low collector-emitter saturation voltage ensures reduced power consumption. APPLICATIONS - Battery powered units where high current and low power consumption are important. DESCRIPTION PNP BISS (Breakthrough In Small Signal) transistor in a SOT23 plastic package. NPN plement: PMMT491A. MARKING TYPE NUMBER PMMT591A Note 1. ∗ = p: Made in Hong Kong. ∗ = t: Made in Malaysia. MARKING CODE(1) 9B∗ Top view handbook, halfpage PMMT591A PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 3 1 2 1 2 MAM256 Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector - - - - - - - - 65 - - 65 MIN. MAX. - 40 - 40 - 5 - 1 - 2 - 1 250 +150 150 +150 V V V A A A m W °C °C °C UNIT 1999 Aug 04 Philips Semiconductors Product specification PNP BISS transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO ICEO IEBO h FE PARAMETER collector cut-off current collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = - 30 V IB = 0; VCE = - 30 V IC = 0; VEB = - 5 V VCE = - 5 V; note 1 IC = - 1 m A IC = - 100 m A IC = - 500 m A IC = - 1 A VCEsat collector-emitter saturation voltage note 1 IC = - 100 m A; IB = - 1 m A IC = - 500 m A; IB...