Datasheet Summary
N-channel µTrenchMOS™ ultra low level FET
M3D173
Rev. 01
- 3 March 2004
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.
1.2 Features s Surface mounted package s Low on-state resistance s Footprint 63% smaller than SOT23 s Low threshold voltage.
1.3 Applications s Driver circuits s Switching in portable appliances.
1.4 Quick reference data s VDS ≤ 30 V s Ptot ≤ 0.53 W s ID ≤ 0.8 A s RDSon ≤ 480 mΩ.
2. Pinning information
Table 1: Pin 1 2 3 Pinning
- SOT416 (SC-75), simplified outline and symbol Description gate (g) source (s) drain (d) g 1 Top view 2
MBK090 MBB076
Simplified...
