PMR400UN - N-channel mTrenchMOS ultra low level FET

Philips Semiconductors (now NXP Semiconductors)

General Description

N-channel enhancement mode ﬁeld-effect transistor in a plastic package using TrenchMOS™ technology.

Key Features

s Surface mounted package s Low on-state resistance s Footprint 63% smaller than SOT23 s Low threshold voltage. 1.3.

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PMR400UN n-channel mtrenchmos ultra low level fet by Philips Semiconductors (now NXP Semiconductors) - Datasheet Preview

Datasheet Details

Part number	PMR400UN
Manufacturer	Philips Semiconductors (now NXP Semiconductors)
File Size	90.18 KB
Description	N-channel mTrenchMOS ultra low level FET
Datasheet	PMR400UN Datasheet

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PMR400UN N-channel µTrenchMOS™ ultra low level FET M3D173 Rev. 01 — 3 March 2004 Product data 1. Product proﬁle 1.1 Description N-channel enhancement mode ﬁeld-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features s Surface mounted package s Low on-state resistance s Footprint 63% smaller than SOT23 s Low threshold voltage. 1.3 Applications s Driver circuits s Switching in portable appliances. 1.4 Quick reference data s VDS ≤ 30 V s Ptot ≤ 0.53 W s ID ≤ 0.8 A s RDSon ≤ 480 mΩ. 2. Pinning information Table 1: Pin 1 2 3 Pinning - SOT416 (SC-75), simpliﬁed outline and symbol Description gate (g) source (s) drain (d) g 1 Top view 2 MBK090 MBB076 Simpliﬁed outline 3 Symbol d s SOT416 (SC-75) 3.