PMSS3904 Datasheet | Philips Semiconductors

FEATURES - Low current (max. 100 m A) - Low voltage (max. 40 V). APPLICATIONS - General purpose switching and amplification - Telephony and professional munication equipment. DESCRIPTION NPN switching transistor in an SC-70 (SOT323) plastic package. PNP plement: PMSS3906. PINNING PIN 1 2 3 base emitter collector DESCRIPTION handbook, halfpage 3 1 MARKING CODE TYPE NUMBER PMSS3904 Note 1. ∗ = - : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) ∗04 Fig.1 1 Top view 2 MAM062 Simplified outline (SC-70; SOT323) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector - - - - - - - - 65 - - 65 MIN. MAX. 60 40 6 100 200 200 200 +150 150 +150 V V V m A m A m A m W °C °C °C UNIT 1999 May 27 Philips Semiconductors Product specification NPN switching transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO h FE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = 30 V IE = 0; VCB = 30 V; Tj = 150 °C IC = 0; VEB = 5 V VCE = 1 V; see Fig.2 IC = 0.1 m A IC = 1 m A IC = 10 m A IC = 50 m A; note 1 IC = 100 m A; note 1 VCEsat VBEsat Cc Ce f T F collector-emitter saturation voltage base-emitter saturation voltage collector capacitance emitter capacitance transition frequency noise figure IC = 10 m A; IB = 1 m A IC = 50 m A; IB = 5 m A; note 1 IC = 10 m A; IB = 1 m A IC = 50 m A; IB = 5 m A; note 1 IE = ie = 0; VCB = 5 V; f = 1 MHz IC = ic = 0; VEB...