PMST2369 Datasheet | Philips Semiconductors

FEATURES - Low current (max. 200 m A) - Low voltage (max. 15 V). APPLICATIONS - High-speed switching applications, primarily in portable and consumer equipment. DESCRIPTION NPN switching transistor in a SOT323 plastic package. handbook, halfpage PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 1 MARKING TYPE NUMBER PMST2369 Note 1. ∗ = - : Made in Hong Kong. ∗ = t : Made in Malaysia. Fig.1 Simplified outline (SOT323) and symbol. MARKING CODE(1) ∗1J 1 Top view 2 MAM062 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 tp ≤ 10 µs CONDITIONS open emitter open base open collector - - - - - - - - 65 - - 65 MIN. MAX. 40 15 5 200 300 100 200 +150 150 +150 V V V m A m A m A m W °C °C °C UNIT 1999 Apr 22 Philips Semiconductors Product specification NPN switching transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO h FE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = 20 V IE = 0; VCB = 20 V; Tj = 125 °C IC = 0; VEB = 4 V IC = 10 m A; VCE = 1 V IC = 100 m A; VCE = 2 V; note 1 VCEsat VBEsat Cc f T ton td tr toff ts tf Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. collector-emitter saturation voltage IC = 10 m A; IB = 1 m A base-emitter saturation voltage collector capacitance transition frequency IC = 10 m A; IB = 1 m A IE = ie = 0; VCB = 5 V; f = 1 MHz IC = 10 m A; VCE = 10 V; f = 100 MHz ICon = 10 m A; IBon = 3 m A; IBoff = - 1.5 m A - - - 40 20 - 700 - 500 - - - - - - MIN. PARAMETER thermal...