PMST5088 Datasheet | Philips Semiconductors

FEATURES - Low current (max. 100 m A) - Low voltage (max. 30 V). APPLICATIONS - Low-noise input stages in audio equipment. DESCRIPTION NPN transistor in a SC-70; SOT323 plastic package. MARKING TYPE NUMBER PMST5088 PMST5089 Note 1. ∗ = - : Made in Hong Kong. ∗ = t : Made in Malaysia. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO PARAMETER collector-base voltage PMST5088 PMST5089 VCEO collector-emitter voltage PMST5088 PMST5089 VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector open base CONDITIONS open emitter MARKING CODE(1) ∗1Q ∗1R Fig.1 1 Top view handbook, halfpage PMST5088; PMST5089 PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 1 2 MAM062 Simplified outline (SC-70; SOT323) and symbol. MIN. - - - - - - - - - - 65 - - 65 MAX. 35 30 30 25 4.5 100 200 100 200 +150 150 +150 V V V V V UNIT m A m A m A m W °C °C °C 1999 Apr 22 Philips Semiconductors Product specification NPN general purpose transistors THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO h FE PARAMETER collector cut-off current emitter cut-off current DC current gain PMST5088 CONDITIONS IE = 0; VCB = 20 V PARAMETER thermal resistance from junction to ambient PMST5088; PMST5089 CONDITIONS note 1 VALUE 625 UNIT K/W MIN. - - - - 300 350 300 400 450 400 - - - - MAX. 50 10 50 100 900 - -...