PMST6428 Datasheet | Philips Semiconductors

FEATURES - Low current (max. 100 m A) - Low voltage (max. 50 V). APPLICATIONS - General purpose switching and amplification in e.g. telephony and professional munication equipment. DESCRIPTION NPN transistor in an SC-70; SOT323 plastic package. MARKING TYPE NUMBER PMST6428 PMST6429 Note 1. ∗ = - : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) ∗1K ∗1L Fig.1 1 Top view PMST6428; PMST6429 PINNING PIN 1 2 3 base emitter collector DESCRIPTION handbook, halfpage 3 1 2 MAM062 Simplified outline (SC-70; SOT323) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO PARAMETER collector-base voltage PMST6428 PMST6429 VCEO collector-emitter voltage PMST6428 PMST6429 VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector open base - - - - - - - - 65 - - 65 50 45 6 100 200 100 200 +150 150 +150 V V V m A m A m A m W °C °C °C CONDITIONS open emitter - - 60 55 V V MIN. MAX. UNIT 1999 Apr 22 Philips Semiconductors Product specification NPN general purpose transistors THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb ≤ 25 °C unless otherwise specified. SYMBOL ICBO IEBO h FE PARAMETER collector cut-off current emitter cut-off current DC current gain PMST6428 CONDITIONS IE = 0; VCB = 30 V PARAMETER thermal resistance from junction to ambient PMST6428; PMST6429 CONDITIONS note 1 VALUE 625 UNIT K/W MIN. - - - 250 250 250 250 500 500 500 500 - - 560 - - 100 MAX. 10 10 10 - 650 - - -...