PN3439 Datasheet | Philips Semiconductors

FEATURES - Low current (max. 100 m A) - High voltage (max. 350 V). APPLICATIONS - Telephony and professional munication equipment. DESCRIPTION NPN high-voltage transistor in a TO-92; SOT54 plastic package. 1 handbook, halfpage PN3439; PN3440 PINNING PIN 1 2 3 collector base emitter DESCRIPTION 2 3 1 2 3 MAM279 Fig.1 Simplified outline (TO-92; SOT54) and symbol. QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage PN3439 PN3440 VCEO collector-emitter voltage PN3439 PN3440 ICM Ptot h FE h FE f T peak collector current total power dissipation DC current gain PN3439 DC current gain PN3440 transition frequency IC = 10 m A; VCE = 10 V; f = 100 MHz IC = 20 m A; VCE = 10 V 40 70 - - MHz Tamb ≤ 25 °C IC = 2 m A; VCE = 10 V 30 - open base - - - - 350 250 200 500 V V m A m W open emitter - - 400 300 V V CONDITIONS MIN. MAX. UNIT 1997 Sep 04 Philips Semiconductors Product specification NPN high-voltage transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO PN3439 PN3440 VCEO collector-emitter voltage PN3439 PN3440 VEBO IC ICM IBM Ptot Tstg Tj Tamb emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C open collector open base PARAMETER collector-base voltage CONDITIONS open emitter PN3439; PN3440 MIN. - - - - - - - - - - 65 - - 65 MAX. 400 300 350 250 5 100 200 100 500 +150 150 +150 V V V V V UNIT m A m A m A m W °C °C °C THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER thermal resistance from junction to ambient note 1 CONDITIONS VALUE 250 UNIT K/W 1997 Sep 04 Philips Semiconductors Product...