DESCRIPTION
Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended for applications such as analog switches, choppers, commutators etc. PINNING 1 = gate 2 = source 3 = drain Note: Drain and source are interchangeable. 1 handbook, halfpage 2 3 PN4391 to 4393 g MAM042 d s Fig.1 Simplified outline and symbol, TO-92. QUICK REFERENCE DATA Drain-source voltage Total power dissipation up to Tamb = 25 °C Drain current VDS = 20 V; VGS = 0 Gate-source cut-off voltage VDS = 20 V; ID = 1 nA Drain-source on-resistance ID = 1 mA; VGS = 0 RDS on max. 30 60 100 Ω −VGS off min. max. 4 10 2 5 0.5 V 3 V IDSS min. 50 25 5 mA Ptot max. PN4391 360 PN4392 PN4393 mW ± VDS max. 40 V RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage Gate-source voltage Gate-drain voltage Forward gate current (DC) Total power dissipation up to Tamb = 25 °C Storage temperature range Junction temperature Ptot Tstg Tj max. max. 360 −65 to+150 150 mW °C °C ± VDS −VGSO −VGDO IG max. max. max. max.
Philips
