PN4416A Description
N-channel symmetrical silicon junction FETs in a SOT54 envelope. These devices are intended for use in VHF/UHF amplifiers, oscillators and mixers. PIN 1 2 3 gate source drain DESCRIPTION IDSS Ptot VGS(off) QUICK REFERENCE DATA SYMBOL VDS PARAMETER drain-source voltage PN4416 PN4416A drain current total power dissipation gate-source cut-off voltage PN4416 PN4416A Yfs mon-source transfer admittance PN4416;.
PN4416A Key Features
- Low noise
- Interchangeability of drain and source connections
- High gain. DESCRIPTION N-channel symmetrical silicon junction FETs in a SOT54 envelope. These devices are intended for u
- 30 35 15 400 V V mA mW
- 2.5 VDS = 15 V; VGS = 0; f = 1 kHz 4.5
- 6 -6 7.5