PRF947 Datasheet | Philips Semiconductors

FEATURES - Small size - Low noise - Low distortion - High gain - Gold metallization ensures excellent reliability. APPLICATIONS - munication and instrumentation systems. DESCRIPTION Silicon NPN transistor in a surface mount 3-pin SOT323 package. The transistor is primarily intended for wideband applications in the GHz-range in the RF front end of analog and digital cellular telephones, cordless phones, radar detectors, pagers and satellite TV-tuners. 1 Top view 2 MAM062 PINNING PIN 1 2 3 base emitter collector DESCRIPTION handbook, halfpage 3 1 2 Marking code: V0. Fig.1 Simplified outline (SOT323) and symbol. QUICK REFERENCE DATA SYMBOL Cre f T GUM NF Ptot Rth j-s Note 1. Ts is the temperature at the soldering point of the collector pin. PARAMETER feedback capacitance transition frequency maximum unilateral power gain noise figure total power dissipation thermal resistance from junction to soldering point CONDITIONS IC = 0; VCB = 6 V; f = 1 MHz IC = 15 m A; VCE = 6 V; fm = 1 GHz IC = 15 m A; VCE = 6 V; Tamb = 25 °C; f = 1 GHz ΓS = Γopt; IC = 5 m A; VCE = 6 V; f = 1 GHz Ts = 60 °C; note 1 Ptot = 250 m W MIN. - - - - - - TYP. 0.3 8.5 16 1.5 - - MAX. - - - - 250 460 UNIT p F GHz d B d B m W K/W 1999 Jul 23 Philips Semiconductors Product specification UHF wideband transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC IC(AV) Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector pin. THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector pin. PARAMETER thermal resistance from junction to soldering point CONDITIONS Ptot = 250 m W; Ts = 60 °C; note 1 VALUE 460 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage DC collector current average collector current total power dissipation storage temperature junction temperature Ts = 60 °C; note 1 open emitter open base open collector CONDITIONS...