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PSMN003-25W Datasheet PDF

Philips PSMN003-25W

The PSMN003-25W is supplied in the SOT429 (TO247) conventional leaded package.
Part No. PSMN003-25W
Datasheet PSMN003-25W Download
Manufacturer
Philips
Description N-channel logic level TrenchMOS transistor
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PSMN003-25W datasheet page 1 preview

FEATURES

● ’Trench’ technology
● Very low on-state resistance
● Fast switching
● Low thermal resistance g PSMN003-25W QUICK REFERENCE DATA SYMBOL d VDSS = 25 V ID = 100 A RDS(ON) ≤ 3.2 mΩ (VGS = 10 V) RDS(ON) ≤ 3.5 mΩ (VGS = 5 V) s

GENERAL DESCRIPTION

SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in each package at each voltage rating.

APPLICATIONS

:● d.c. to d.c. converters
● switched mode power supplies PINNING PIN 1 2 3 tab gate drain source drain

DESCRIPTION

SOT429 (TO247) 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDSS VDGR VGS VGSM ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Continuous gate-source voltage Peak pulsed gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature CONDITIONS Tj = 25 ˚C to 175˚C Tj = 25 ˚C to 175˚C; RGS = 20 kΩ Tj ≤ 150 ˚C Tmb = 25 ˚C; VGS = 5 V Tmb = 100 ˚C; VGS = 5 V Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 MAX.
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