PSMN009-100W - N-channel TrenchMOS transistor

Philips Semiconductors (now NXP Semiconductors)

General Description

N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology.

The device has very low on-state resistance.

It is intended for use in dc to dc converters and general purpose switching applications.

Key Features

’Trench’ technology.
Very low on-state resistance.
Fast switching.
High thermal cycling performance.
Low thermal resistance SYMBOL d QUICK.

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PSMN009-100W n-channel trenchmos transistor by Philips Semiconductors (now NXP Semiconductors) - Datasheet Preview

Datasheet Details

Part number	PSMN009-100W
Manufacturer	Philips Semiconductors (now NXP Semiconductors)
File Size	28.85 KB
Description	N-channel TrenchMOS transistor
Datasheet	PSMN009-100W Datasheet

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Other Datasheets by Philips Semiconductors (now NXP Semiconductors)

Part Number	Description
PSMN009-100B	N-channel enhancement mode field-effect transistor
PSMN009-100P	N-channel enhancement mode field-effect transistor
PSMN003-25W	N-channel logic level TrenchMOS transistor
PSMN004-25B	N-channel logic level TrenchMOS transistor
PSMN004-25P	N-channel logic level TrenchMOS transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Philips Semiconductors Objective specification TrenchMOS™ transistor PSMN009-100W FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • High thermal cycling performance • Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 100 V ID = 100 A g RDS(ON) ≤ 9 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PSMN009-100W is supplied in the SOT429 (TO247) conventional leaded package.