PSMN009-100W Datasheet | Philips Semiconductors

Philips Semiconductors Objective specification TrenchMOS™ transistor Features - ’Trench’ technology - Very low on-state resistance - Fast switching - High thermal cycling performance - Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 100 V ID = 100 A g RDS(ON) ≤ 9 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PSMN009-100W is supplied in the SOT429 (TO247) conventional leaded package. PINNING PIN 1 2 3 tab gate drain source drain...