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PSMN020-150W - N-channel TrenchMOS transistor

General Description

N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology.

The device has very low on-state resistance.

It is intended for use in dc to dc converters and general purpose switching applications.

Key Features

  • ’Trench’ technology.
  • Very low on-state resistance.
  • Fast switching.
  • High thermal cycling performance.
  • Low thermal resistance SYMBOL d QUICK.

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Part Number Description
PSMN025-100D N-channel TrenchMOS transistor
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Philips Semiconductors Objective specification TrenchMOS™ transistor PSMN020-150W FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • High thermal cycling performance • Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 150 V ID = 73 A g RDS(ON) ≤ 20 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PSMN020-150W is supplied in the SOT429 (TO247) conventional leaded package.