PSS8050 Datasheet | Philips Semiconductors

FEATURES - High total power dissipation - High current capability. APPLICATIONS - Medium power switching and muting - Amplification - Portable radio output amplifier (class-B, push-pull). DESCRIPTION NPN transistor in a SOT54 (TO-92) plastic package. PNP plement: PSS8550. handbook, halfpage QUICK REFERENCE DATA SYMBOL VCEO IC PINNING PIN 1 2 3 collector base emitter DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) MAX. 25 1.5 UNIT V A MARKING TYPE NUMBER PSS8050C PSS8050D MARKING CODE 2 3 MSB033 S8050C S8050D Fig.1 Simplified outline (SOT54). LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current base current (DC) peak base current total power dissipation Tamb ≤ 25 °C; note 1 Tamb ≤ 25 °C; note 2 Tamb ≤ 25 °C; note 3 Tstg Tj Tamb Notes 1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint. 2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2. 3. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint. Operated under pulsed conditions: pulse width tp ≤ 1 s; duty cycle δ ≤ 0.75%. storage temperature junction temperature operating ambient temperature CONDITIONS open emitter open base open collector - - - - - - - - - - - 65 - - 65 MIN. MAX. 40 25 6 1.5 2 300 1 850 900 1 +150 150 +150 V V V A A m A A m W m W W °C °C °C UNIT 2004 Aug 10 Philips Semiconductors Product specification NPN medium power 25 V transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS in free air; note 1 in free air; note 2 in free air; note 3 Notes 1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint. VALUE 147 139...