PSS9013G Datasheet | Philips Semiconductors

FEATURES - High power dissipation: 710 m W - Low collector capacitance - Low collector-emitter saturation voltage - High current capability. APPLICATIONS - General purpose switching and amplification. DESCRIPTION NPN general purpose transistor in a SOT54 (TO-92) leaded plastic package. PNP plement: PSS9012 series. MARKING TYPE NUMBER PSS9013G PSS9013H MARKING CODE S9013G S9013H QUICK REFERENCE DATA SYMBOL PARAMETER VCEO IC ICM collector-emitter voltage collector current (DC) peak collector current MAX. UNIT 20 V 500 m A 1A PINNING PIN 1 2 3 collector base emitter DESCRIPTION handbook, halfpage1 2 3 1 2 MAM279 Fig.1 Simplified outline (SOT54; TO-92) and symbol. LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL PARAMETER VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature CONDITIONS open emitter open base open collector Tamb ≤ 25 °C; note 1 MIN. - - - - - - - - 65 - - 65 MAX. 40 20 5 500 1 100 710 +150 150 +150 Note 1. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated and standard footprint. UNIT...