PSS9014C Datasheet | Philips Semiconductors

FEATURES - High power dissipation: 500 m W - Low collector capacitance - Low collector-emitter saturation voltage - High current capability. APPLICATIONS - General purpose switching and amplification. 1 handbook, halfpage PINNING PIN 1 2 3 collector base emitter DESCRIPTION DESCRIPTION NPN low VCEsat transistor in a SOT54 (TO-92) plastic package. 2 3 1 2 3 MAM279 MARKING TYPE NUMBER PSS9014C MARKING CODE S9014C Fig.1 Simplified outline (SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector - - - - - - - - 65 - - 65 MIN. MAX. 50 45 5 100 200 200 500 +150 150 +150 V V V m A m A m A m W °C °C °C UNIT 2004 Aug 10 Philips Semiconductors Product specification NPN general purpose transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO ICEO IEBO h FE VCEsat VBEsat VBEon f T Cc F Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. PARAMETER collector-base cut-off current collector-emitter cut-off current emitter-base cut-off current DC current gain collector-emitter saturation voltage base-emitter saturation voltage base-emitter turn-on voltage transition frequency collector capacitance noise figure CONDITIONS VCB = 30 V; IE = 0 VCB = 30 V; IE = 0; Tamb = 150 °C VCE = 30 V; IB = 0 VEB = 5 V; IC = 0 IC = 1 m A; VCE = 5 V IC = 2 m A; VCE = 5 V IC = 100 m A; IB = 5 m A; note 1 IC = 100 m A; IB = 0.5 m A; note 1 IC =...