SA1920 Datasheet | Philips Semiconductors

INTEGRATED CIRCUITS SA1920 Dual-band RF front-end Product specification Supersedes data of 1998 Apr 07 IC17 Data Handbook 1999 Mar 02 Philips Semiconductors Philips Semiconductors Product specification Dual-band RF front-end DESCRIPTION The SA1920 is an integrated dual-band RF front-end that operates at both cellular (AMPS, GSM and TDMA) and PCS/DCS (TDMA and GSM) frequencies, and is designed in a 13 GHz fT BiCMOS process- QUBiC1. The low-band is a bined low-noise amplifier (LNA) and mixer. The LNA has a 1.7 dB noise figure at 881 MHz with 17.5 dB of gain and an IIP3 of - 5 dBm. The wide-dynamic range mixer has a 10 dB noise figure at 881 MHz with 9.5 dB of gain and an IIP3...