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SA5209 - Wideband variable gain amplifier

General Description

The SA5209 represents a breakthrough in monolithic amplifier design featuring several innovations.

This unique design has combined the advantages of a high speed bipolar process with the proven Gilbert architecture.

Key Features

  • Gain to 1.5GHz.
  • 850MHz bandwidth.
  • High impedance differential input.
  • 50Ω differential output.
  • Single 5V power supply.
  • 0 - 1V gain control pin.
  • >60dB gain control range at 200MHz.
  • 26dB maximum gain differential.
  • Exceptional.

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Other Datasheets by Philips Semiconductors (now NXP Semiconductors)

Part Number Description
SA5200 RF dual gain-stage
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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INTEGRATED CIRCUITS SA5209 Wideband variable gain amplifier Product specification Replaces data of 1990 Aug 20 IC17 Data Handbook 1997 Nov 07 Philips Semiconductors Philips Semiconductors Product specification Wideband variable gain amplifier SA5209 DESCRIPTION The SA5209 represents a breakthrough in monolithic amplifier design featuring several innovations. This unique design has combined the advantages of a high speed bipolar process with the proven Gilbert architecture. The SA5209 is a linear broadband RF amplifier whose gain is controlled by a single DC voltage. The amplifier runs off a single 5 volt supply and consumes only 40mA. The amplifier has high impedance (1kΩ) differential inputs. The output is 50Ω differential.