SA910 Datasheet | Philips Semiconductors

INTEGRATED CIRCUITS SA910 Variable gain RF predriver amplifier Product specification 1997 Aug 12 Philips Semiconductors Philips Semiconductors Product specification Variable gain RF predriver amplifier DESCRIPTION The SA910 is a variable gain predriver amplifier designed for handheld analog cellular telephones. When used with a UHF power transistor, it forms a cost-effective, low-profile, surface mount power amplifier solution (1.2W maximum PAE > 50%). The SA910 integrates power detection and control circuitry that is stabilized over temperature and voltage. In power down mode, the SA910 draws less than 10µA of current. The SA910 is fabricated using Philips QUBi C Bi CMOS process. PIN CONFIGURATION VCC1 VREF GND RFIN GND GND 1 2 3 4 5 6 7 8 9 10 20 19 18 17 16 15 14 13 12 11 PSENSE BIASOUT GND RFOUT1 GND GND RFOUT2 GND PWRUP OFFSET Features - MMIC Bi CMOS predriver amplifier - Low voltage 2.7 to 5.5V single supply operation - 820 to 905MHz bandwidth - High power gain >20d B - High power output >23d Bm (typical) @ 3V - Efficiency = 35% (typical) - Wide gain control range: >32d B - Few external ponents required - Integrated power detector and parison gain control circuitry - 50Ω input, open-collector output - SSOP-20 package - Integrated regulator with offset adjustment for biasing an external output stage OUTLPF GND VC VCC BIAS SR01067 APPLICATIONS - 900MHz analog cellular - Handheld transmitting equipment in the 820 to 905MHz frequency range - Cordless...