45N03LT Datasheet | Philips Semiconductors

FEATURES - ’Trench’ technology - Very low on-state resistance - Fast switching - Stable off-state characteristics - High thermal cycling performance - Low thermal resistance SYMBOL g d s QUICK REFERENCE DATA VDSS = 30 V ID = 45 A RDS(ON) ≤ 24 mΩ (VGS = 5 V) RDS(ON) ≤ 21 mΩ (VGS = 10 V) GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP45N03LT is supplied in the SOT78 (TO220AB) conventional leaded package. PINNING PIN DESCRIPTION 1 gate 2 drain 3 source tab drain SOT78 (TO220AB) tab 1 23 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS VDGR ±VGS ID ID IDM Ptot Tstg, Tj Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage & operating temperature - RGS = 20 kΩ - Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C - THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS - in free air MIN. - 55 MAX. 30 30 15 45 36 180 86...