BAW156 - Low-leakage double diode

Philipss

General Description

DESCRIPTION Epitaxial, medium-speed switching, double diode in a small SOT23 plastic SMD package.

The diodes are in common anode configuration.

Marking code: JZp = made in Hong Kong; JZt = made in Malaysia.

Key Features

Plastic SMD package.
Low leakage current: typ. 3 pA.
Switching time: typ. 0.8 µs.
Continuous reverse voltage: max. 75 V.
Repetitive peak reverse voltage: max. 85 V.
Repetitive peak forward current: max. 500 mA.

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BAW156 low-leakage double diode by Philipss - Datasheet Preview

Datasheet Details

Part number	BAW156
Manufacturer	Philipss
File Size	69.71 KB
Description	Low-leakage double diode
Datasheet	BAW156 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 BAW156 Low-leakage double diode Product speciﬁcation Supersedes data of 1996 Mar 13 1999 May 11 Philips Semiconductors Product speciﬁcation Low-leakage double diode FEATURES • Plastic SMD package • Low leakage current: typ. 3 pA • Switching time: typ. 0.8 µs • Continuous reverse voltage: max. 75 V • Repetitive peak reverse voltage: max. 85 V • Repetitive peak forward current: max. 500 mA. APPLICATION • Low-leakage current applications in surface mounted circuits. Top view handbook, 4 columns BAW156 PINNING PIN 1 2 3 cathode cathode common anode DESCRIPTION 2 1 2 3 3 MAM206 1 DESCRIPTION Epitaxial, medium-speed switching, double diode in a small SOT23 plastic SMD package. The diodes are in common anode configuration.