LBE2009S Overview
LCE2009S The LBE2003S and LBE2009S are NPN silicon planar epitaxial microwave power transistors in a SOT441A metal ceramic studless package.The LCE2009S is a maintenance type in a SOT442A metal ceramic capstan package. PINNING DESCRIPTION collector emitter base emitter handbook, halfpage 4 handbook, halfpage 4 c 3 1 3 c b e 2 Top view Marking code: MAM330 b e 2 1 Top view MAM329 Marking code:.
LBE2009S Key Features
- Diffused emitter ballasting resistors
- Self-aligned process entirely ion implanted and gold metallization
- Optimum temperature profile
- Excellent performance and reliability
LBE2009S Applications
- mon emitter class-A linear power amplifiers up to 4 GHz. PIN 1 2 3 4 DESCRIPTION
- toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or di
- NOT REMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15