Datasheet Summary
DISCRETE SEMICONDUCTORS
DATA SHEET
LBE2003S; LBE2009S; LCE2009S NPN microwave power transistors
Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Mar 03
Philips Semiconductors
Product specification
NPN microwave power transistors
Features
- Diffused emitter ballasting resistors
- Self-aligned process entirely ion implanted and gold metallization
- Optimum temperature profile
- Excellent performance and reliability. APPLICATIONS
- mon emitter class-A linear power amplifiers up to 4 GHz. PIN 1 2 3 4 DESCRIPTION
LBE2003S; LBE2009S; LCE2009S
The LBE2003S and LBE2009S are NPN silicon planar epitaxial microwave power transistors in a...