LCE2009S - NPN microwave power transistors

Datasheet Summary

Description

The LBE2003S and LBE2009S are NPN silicon planar epitaxial microwave power transistors in a SOT441A metal ceramic studless package.The LCE2009S is a maintenance type in a SOT442A metal ceramic capstan package.

Features

Diffused emitter ballasting resistors.
Self-aligned process entirely ion implanted and gold metallization.
Optimum temperature profile.
Excellent performance and reliability.

Philipss

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Datasheet Details

Part number	LCE2009S
Manufacturer	Philipss
File Size	126.01 KB
Description	NPN microwave power transistors
Datasheet	LCE2009S Datasheet
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DISCRETE SEMICONDUCTORS DATA SHEET LBE2003S; LBE2009S; LCE2009S NPN microwave power transistors Product speciﬁcation Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Mar 03 Philips Semiconductors Product speciﬁcation NPN microwave power transistors FEATURES • Diffused emitter ballasting resistors • Self-aligned process entirely ion implanted and gold metallization • Optimum temperature profile • Excellent performance and reliability. APPLICATIONS • Common emitter class-A linear power amplifiers up to 4 GHz. PIN 1 2 3 4 DESCRIPTION LBE2003S; LBE2009S; LCE2009S The LBE2003S and LBE2009S are NPN silicon planar epitaxial microwave power transistors in a SOT441A metal ceramic studless package.

Published: Apr 25, 2005 |