MF1011B900Y Description
NPN silicon planar epitaxial microwave power transistor in a SOT448A glued cap metal ceramic flange package, with base connected to flange. handbook, 4 columns MF1011B900Y QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a mon-base class C narrowband amplifier. MODE OF OPERATION Class C CONDITIONS tp = 10 µs;.
MF1011B900Y Key Features
- Suitable for short and medium pulse