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MF1011B900Y - Microwave power transistor

General Description

NPN silicon planar epitaxial microwave power transistor in a SOT448A glued cap metal ceramic flange package, with base connected to flange.

QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common-base class C narrowband amplifier.

Key Features

  • Suitable for short and medium pulse.

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Datasheet Details

Part number MF1011B900Y
Manufacturer Philipss
File Size 88.85 KB
Description Microwave power transistor
Datasheet download datasheet MF1011B900Y Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET MF1011B900Y Microwave power transistor Product specification Supersedes data of December 1994 1997 Feb 18 Philips Semiconductors Product specification Microwave power transistor FEATURES • Suitable for short and medium pulse applications up to 100 µs pulse width, duty factor 10% • Diffused emitter ballasting resistors improve ruggedness • Interdigitated emitter-base structure provides high emitter efficiency • Gold metallization with barrier realizes very stable characteristics and excellent lifetime • Multicell geometry improves power sharing and reduces thermal resistance • Internal input and output prematching networks allow an easier design of circuits.