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MF1011B900Y Datasheet Microwave Power Transistor

Manufacturer: Philipss

Overview: DISCRETE SEMICONDUCTORS DATA SHEET MF1011B900Y Microwave power transistor Product specification Supersedes data of December 1994 1997 Feb 18 Philips Semiconductors Product specification Microwave power.

General Description

NPN silicon planar epitaxial microwave power transistor in a SOT448A glued cap metal ceramic flange package, with base connected to flange.

handbook, 4 columns MF1011B900Y QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common-base class C narrowband amplifier.

MODE OF OPERATION Class C CONDITIONS tp = 10 µs;

Key Features

  • Suitable for short and medium pulse.

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