NE57811S Datasheet | Philipss

INTEGRATED CIRCUITS NE57811 Advanced DDR memory termination power with shutdown Product data Supersedes data of 2002 Jul 16 2003 Apr 02 Philips Semiconductors Philips Semiconductors Product data Advanced DDR memory termination power with shutdown NE57811 DESCRIPTION The NE57811 is designed to provide power for termination of a Double Data Rate (DDR) SDRAM memory bus. It significantly reduces parts count, board space, and overall system cost pared to previous solutions. The NE57811 DDR termination regulator maintains an output voltage (DDR reference bus voltage) that is one-half that of the RAM supply voltage. It is capable of providing up to ±3.5 A for sustained periods. Overcurrent limiting protects the NE57811 from inrush currents at start-up, and overtemperature shutdown protects the device in extreme temperature situations. The SPAK-5 (SOT756) package is thermally robust for flexibility of thermal design. Because the NE57811 is a linear regulator, no external inductors or switching FETs are necessary. Fast response to load changes reduces the need for output capacitors. Features - Fast transient response time - Overtemperature protection - Overcurrent protection - mercial (0 °C to +70 °C) temperature range - Reduced need for external ponents (switching FETs, inductors, decoupling capacitors) APPLICATIONS - Internal divider maintains termination voltage at 1/2 memory supply voltage - Desktop microputer systems - Workstations - Servers - Game machines - Set top boxes - Embedded systems - Digital video recorders - Reference out for other memory and control ponents - Shutdown pin that may be used to put the device into low power mode - patible with DDR-I (VDD = 2.5 V) or DDR-II (VDD = 1.8 V) SDRAM...