Ping Jing BAS16WS
Silicon Epitaxial Planar Switching Diode
| Part No. | BAS16WS |
|---|---|
| Datasheet | BAS16WS Download |
| Manufacturer |  Ping Jing |
| Description | Silicon Epitaxial Planar Switching Diode |
| Buy | Stock & Price |
FEATURES
● Fast switching diode● For surface mount application BAS16WS Silicon Epitaxial Planar Switching Diode SOD-323 2 1 1.Cathode 2.Anode Marking Code : SM
ABSOLUTE MAXIMUM RATINGS
at TA = 25 ℃ Parameter Reverse Voltage Peak Reverse Voltage Forward Current (Continuous) Non-repetitive Peak Forward Surge Current at t = 1 s at t = 1 ms at t = 1 µs Maximum Power Dissipation Operating Temperature Range Storage Temperature Range Symbol VR VRM IFRM IFSM PD TJ TSTGELECTRICAL CHARACTERISTICS
at TA = 25 ℃ Parameter Forward Voltage at IF = 1 mA at IF = 10 mA at IF = 50 mA at IF = 150 mA Reverse Leakage Current at VR = 75 V at VR = 25 V,TJ=150°C at VR = 75 V,TJ=150°C Total Capacitance at VR = 0 V, f = 1 MHz Reverse Recovery Time at IF = 10 mA to IR = 10 mA, IR = 1 mA, RL = 100 Ω Symbol VF IR CT Trr Value 75 100 250 0.5 1 2 200 150 -65 to +150 Max. 0.715 0.855 1 1.25 1 30 50 2 6 Unit V V mA A mW °C °C Unit V µA pF nS 1/3 Revision：2.0 Jul-2021 Typical Characteristic Curves BAS16WS Silicon Epit...
