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Features
Low forward voltage Fast reverse recovery time
MMBD914 Silicon Epitaxial Planar Switching Diode
SOT-23
Equivalent Circuit
3.Cathode
Marking Code : 5D
1.Anode 2.NC
Absolute Maximum Ratings (TA=25℃) Parameter
Maximum Repetitive Reverse Voltage Average Rectified Forward Current Non-repetitive Peak Forward Surge Current (t = 1 μs) Power Dissipation Junction Temperature Storage Temperature Range
Symbol
VRRM IF(AV) IFSM PD
TJ TSTG
Value
100 200
4 350 150 -55 to +150
Unit
V mA A mW °C °C
Electrical Characteristics (TA=25℃)
Parameter
Forward Voltage at IF =10 mA Reverse Breakdown Voltage at IR = 100 µA Reverse Current at VR = 20 V at VR = 75 V Typical Junction Capacitance at VR= 0 V, f= 1 MHz Maximum Reverse Recovery Time at IF = IR = 10 mA
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MMBD914 Datasheet
