Ping Jing MMBT9013
NPN Transistor
FEATURES
● For Switching and AmplifierAPPLICATIONS
.● As Complementary Type of the PNP Transistor MMBT9012 is Recommended. MMBT9013 NPN Transistor SOT-23 (TO-236)
ABSOLUTE MAXIMUM RATINGS
Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature RangeELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified. Parameter DC Current Gain at VCE = 1 V, IC = 50 mA Current Gain Group at VCE = 1 V, IC = 500 mA G H Collector Base Cutoff Current at VCB = 35 V Collector Base Cutoff Current at VCB = 5 V Emitter Base Breakdown Voltage at IC = 100 μA Collector Emitter Breakdown Voltage at IC = 1 mA Emitter Base Breakdown Voltage at IE = 100 μA Collector Emitter Saturation Voltage at IC = 500 mA, IB = 50 mA Base Emitter Saturation Voltage at IC = 500 mA, IB = 50 mA Base Emitter Voltage at VCE