Ping Jing PJM250N40TO
N- Enhancement Mode Field Effect Transistor
| Part No. | PJM250N40TO |
|---|---|
| Datasheet | PJM250N40TO Download |
| Manufacturer |  Ping Jing |
| Description | N- Enhancement Mode Field Effect Transistor |
| Buy | Stock & Price |
FEATURES
● High density cell design for ultra low RDS(on)● Low RDS(ON) and Gate Charge
● Excellent package for good heat dissipation
APPLICATIONS
● Power switching application● Hard switched and high frequency circuits
● Uninterruptible power supply TO-220 1 2 3 Schematic Diagram Drain 2 1 Gate 3 Source
ABSOLUTE MAXIMUM RATINGS
Ratings at TC =25℃ unless otherwise specified. Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Note1 Single Pulse Avalanche Energy Power Dissipation Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Case Note2 Symbol VDS VGS ID IDM EAS PD TJ, TSTG Symbol RθJC Maximum 40 ±20 250 1000 1300 242 175, -55 to 175 Typ. 0.62 Units V V A A mJ W °C Units °C/W Revision：1.0 Sep-2018 1/5 PJM250N40TO N- Enhancement Mode Field Effect TransistorELECTRICAL CHARACTERISTICS
(TC
