PJM250N40TO Overview
Key Features
- High density cell design for ultra low RDS(on)
- Low RDS(ON) and Gate Charge
- Excellent package for good heat dissipation
| Part | PJM250N40TO |
|---|---|
| Description | N- Enhancement Mode Field Effect Transistor |
| Category | Transistor |
| Manufacturer | Ping Jing |
| Size | 651.84 KB |
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