PJM250N40TO - N- Enhancement Mode Field Effect Transistor

Features

High density cell design for ultra low RDS(on).
Low RDS(ON) and Gate Charge.
Excellent package for good heat dissipation.

Ping Jing

Datasheet Details

Part number	PJM250N40TO
Manufacturer	Ping Jing
File Size	651.84 KB
Description	N- Enhancement Mode Field Effect Transistor
Datasheet	PJM250N40TO Datasheet

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Full PDF Text Transcription

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PJM250N40TO N- Enhancement Mode Field Effect Transistor Features ⚫ High density cell design for ultra low RDS(on) ⚫ Low RDS(ON) and Gate Charge ⚫ Excellent package for good heat dissipation Applications ⚫ Power switching application ⚫ Hard switched and high frequency circuits ⚫ Uninterruptible power supply TO-220 1 2 3 Schematic Diagram Drain 2 1 Gate 3 Source Absolute Maximum Ratings Ratings at TC =25℃ unless otherwise specified.

Published: Feb 22, 2019 |