PL10P06
Description
The PL10P06 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The PL10P06 meet the Ro HS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
TO252 Pin Configuration
Absolute Maximum Ratings
Symbol
VDS VGS ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃ IDM EAS IAS PD@TC=25℃ PD@TA=25℃ TSTG TJ
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3
Avalanche Current Total Power Dissipation4 Total Power Dissipation4
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol RθJA RθJC
Parameter Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Case1
Rating -60 ±20 -10 -7.8 -3.5 -2.8 -25 20 -20 25 2
-55...
