Datasheet Details
| Part number | PL50N06BGD5 |
|---|---|
| Manufacturer | Plingsemic |
| File Size | 1.19 MB |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Download | PL50N06BGD5 Download (PDF) |
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Overview: PL50N06BGD5 N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=10V) ● RDS(ON)( at VGS=4.
| Part number | PL50N06BGD5 |
|---|---|
| Manufacturer | Plingsemic |
| File Size | 1.19 MB |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Download | PL50N06BGD5 Download (PDF) |
|
|
|
● Split Gate Trench MOSFET technology ● Excellent package for heat dissipation ● High density cell design for low RDS(ON) Applications ● DC-DC Converters ● Power management functions ● Industrial and Motor Drive application ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage VDS 60 V Gate-source Voltage VGS ±20 V Drain Current (Silicon limited) Tc=25℃ Tc=100℃ 50 ID A 15 Pulsed Drain Current A Avalanche energy B IDM 200 A EAS 66 mJ Total Power Dissipation C Tc=25℃ Tc=100℃ 83 PD W 28 Junction and Storage Temperature Range TJ ,TSTG -55～+150 ℃ ■Thermal resistance Parameter Thermal Resistance Junction-to-Ambient D Thermal Resistance Junction-to-Ambient D Thermal Resistance Junction-to-Case t≤10S Steady-State Steady-State Symbol RθJA RθJC Typ Max Units 10 12 20 30 ℃/W 1.3 1.8 ■ Ordering Information (Example) PREFERED P/N PACKING CODE Marking PL50N06BGD5 F1 50N06BG MINIMUM PACKAGE(pcs) 5000 INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE 10000 100000 13“ reel Rve 1.01 1/5 www.plingsemic.com PL50N06BGD5 ■ Electrical Characteristics (TJ=25℃ unless otherwise noted) Parameter Symbol Conditions Min Typ Max Units Static Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current BVDSS VGS= 0V, ID=250μA 60 TJ=25℃ IDSS VDS=60V,VGS=0V TJ=55℃ V 1 μA 5 Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance IGSS VGS(th) RDS(ON) VGS= ±20V, VDS=0V VDS= VGS, ID=250μA VGS= 10V, ID=20A VGS= 4.5V, ID=10A ±100 nA 2.0 2.5 4.0 V 9.1 10 mΩ 11.5 13 Diode Forward Voltage VSD IS=20A,VGS=0V 0.85 1.3 V Maximum Body-Diode Continuous Current IS Dynamic
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