PL50N06BGD5 Description
pulse width limited by max. VDD=50V, RG=25Ω, L=1mH, IAS=18A,. junction temperature, using junction-case.
PL50N06BGD5 Datasheet
| Part number | PL50N06BGD5 |
|---|---|
| Download | PL50N06BGD5 Datasheet (PDF) |
| File Size | 1.19 MB |
| Manufacturer | Plingsemic |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
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