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F1006 - RF POWER VDMOS TRANSISTOR

Datasheet Summary

Description

Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Features

  • gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM F1006.

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Datasheet preview – F1006

Datasheet Details

Part number F1006
Manufacturer Polyfet RF Devices
File Size 37.66 KB
Description RF POWER VDMOS TRANSISTOR
Datasheet download datasheet F1006 Datasheet
Additional preview pages of the F1006 datasheet.

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Other Datasheets by Polyfet RF Devices
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Full PDF Text Transcription

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polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM F1006 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 120 Watts Single Ended Package Style AV HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE ABSOLUTE MAXIMUM RATINGS (TC = 25 C) Total Device Dissipation 250 Watts Junction to Case Thermal Resistance 0.
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