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F1016 - RF POWER VDMOS TRANSISTOR

Datasheet Summary

Description

Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Features

  • gold metal for greatly extended lifetime. Low output capacitance and high F t enhance broadband performance TM F1016.

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Datasheet preview – F1016

Datasheet Details

Part number F1016
Manufacturer Polyfet RF Devices
File Size 41.35 KB
Description RF POWER VDMOS TRANSISTOR
Datasheet download datasheet F1016 Datasheet
Additional preview pages of the F1016 datasheet.

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Full PDF Text Transcription

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polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high F t enhance broadband performance TM F1016 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 20 Watts Push - Pull Package Style AQ HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE ABSOLUTE MAXIMUM RATINGS (TC = 25 C) Total Device Dissipation 100 Watts Junction to Case Thermal Resistance 1.
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