F1016
Description
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high F t enhance broadband performance
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 20 Watts Push
- Pull Package Style AQ HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
Total Device Dissipation 100 Watts Junction to Case Thermal Resistance 1.75 o C/W Maximum Junction Temperature 200 o C Storage Temperature DC Drain Current Drain to Gate Voltage 70 V Drain to Source Voltage 70 V Gate to Source Voltage 30V o
-65 o C to 150o C
4 A
RF CHARACTERISTICS (
SYMBOL Gps PARAMETER mon Source Pow er Gain Drain Efficiency Load Mismatch Tolerance MIN 13 60 TYP
20WATTS OUTPUT )
MAX UNITS d B % 20:1...
