Polyfet RF Devices F1016
RF POWER VDMOS TRANSISTOR
| Part No. | F1016 |
|---|---|
| Datasheet | F1016 Download |
| Manufacturer |  Polyfet RF Devices |
| Description | RF POWER VDMOS TRANSISTOR |
| Buy | Stock & Price |
GENERAL DESCRIPTION
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high F t enhance broadband performance TM F1016 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 20 Watts Push - Pull Package Style AQ HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISEABSOLUTE MAXIMUM RATINGS
(TC = 25 C) Total Device Dissipation 100 Watts Junction to Case Thermal Resistance 1.75 o C/W Maximum Junction Temperature 200 o C Storage Temperature DC Drain Current Drain to Gate Voltage 70 V Drain to Source Voltage 70 V Gate to Source Voltage 30V o -65 o C to 150o C 4 A RF CHARACTERISTICS ( SYMBOL Gps PARAMETER Common Source Pow er Gain Drain Efficiency Load Mismatch Tolerance MIN 13 60 TYP 20WATTS OUTPUT ) MAX UNITS dB % 20:1 R...