F1174 - RF POWER VDMOS TRANSISTOR

Datasheet Summary

Description

Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Features

gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance Total Device Dissipation 380 Watts Junction to Case Thermal Resistance 0.45 o C/W Maximum Junction Temperature 200 o C Storage Temperature F1174.

Polyfet RF Devices

📥 Download Datasheet

Datasheet Details

Part number	F1174
Manufacturer	Polyfet RF Devices
File Size	45.53 KB
Description	RF POWER VDMOS TRANSISTOR
Datasheet	F1174 Datasheet
Additional preview pages of the F1174 datasheet.

📁 Similar Datasheet

F117 - single chip ASK Transmitter (Synoxo)
F1100 - RF to IF Dual Downconverting Mixer (Integrated Device Technology)
F1100C - 5V FR-4 Surface Mount Crystal Clock Oscillators (Champion)
F1100E - 5.0V TTL CLOCK OSCILLATOR (Fox Electronics)
F1102NBGI - RF to IF Dual Downconverting Mixer (IDT)
F1129 - RF Amplifier (Renesas)
F1129LB - RF Amplifier (Renesas)
F1129MB - RF Amplifier (Renesas)
F113 - single chip ASK Transmitter (Synoxo)
F1139BA - Clock Oscillator (MTRONPTI)

Other Datasheets by Polyfet RF Devices

F1170 - RF POWER VDMOS TRANSISTOR
F1107 - RF POWER VDMOS TRANSISTOR
F1108 - RF POWER VDMOS TRANSISTOR
F1116 - RF POWER VDMOS TRANSISTOR
F1120 - RF POWER VDMOS TRANSISTOR

Full PDF Text Transcription

Click to expand full text

polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. TM "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance Total Device Dissipation 380 Watts Junction to Case Thermal Resistance 0.

Published: Mar 30, 2005 |